AO3414 20v n-channel mosfet features v ds = 20v i d = 3a (v gs = 4.5v) r ds(on) < 62m (v gs = 4.5v) r ds(on) < 70m (v gs = 2.5v) r ds(on) < 85m (v gs = 1.8v) general description the AO3414 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. g ds sot23 top view bottom view d g s g s d symbol v ds v gs i dm t j , t stg symbol typ max 70 90 100 125 r jl 63 80 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a power dissipation a t a =25c junction and storage temperature range p d w t a =70c c/w c 1.4 0.9 -55 to 150 steady-state c/w 16 pulsed drain current b a drain-source voltage 20 continuous drain current a t a =25c t a =70c 8 gate-source voltage i d 3 absolute maximum ratings t a =25c unless otherwise noted vv 2.5 maximum units parameter features v ds = 20v i d = 3a (v gs = 4.5v) r ds(on) < 62m (v gs = 4.5v) r ds(on) < 70m (v gs = 2.5v) r ds(on) < 85m (v gs = 1.8v) general description the AO3414 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. g ds sot23 top view bottom view d g s g s d rev 7: july 2010 www.aosmd.com page 1 of 5 downloaded from: http:///
AO3414 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.4 0.7 1 v i d(on) 16 a 51 62 t j =125c 68 85 58 70 m 68 85 m g fs 11 s v sd 0.7 1 v i s 2 a c iss 260 320 pf c oss 48 pf c rss 27 pf r g 3 4.5 q g 2.9 3.8 nc q gs 0.4 nc q gd 0.6 nc t d(on) 2.5 ns drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =3a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =20v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m v gs =2.5v, i d =2.8a i s =1a,v gs =0v v ds =5v, i d =3a v gs =1.8v, i d =2.5a gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =10v, i d =3a gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge rev 7: july 2010 www.aosmd.com page 2 of 5 t d(on) 2.5 ns t r 3.2 ns t d(off) 21 ns t f 3 ns t rr 14 19 ns q rr 3.8 nc 12 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =3a, di/dt=100a/ s i f =3a, di/dt=100a/ s turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =3.3 , r gen =6 turn-off fall time turn-on delaytime a: the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r ja is the sum of the thermal impedence from junction t o lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev 7: july 2010 www.aosmd.com page 2 of 5 downloaded from: http:///
AO3414 typical electrical and thermal characteristics 0 4 8 12 16 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics v gs =1.5v 2v 2.5v 4.5v 0 4 8 12 16 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v 40 60 80 100 120 0 3 6 9 12 r ds(on) (m ? ) v gs =1.8v v gs =2.5v v gs =4.5v 0.8 1 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 175 normalized on-resistance v gs =1.8v i d =2.5a v gs =4.5v i d =3a v gs =2.5v i d =2.8a rev 7: july 2010 www.aosmd.com page 3 of 5 12 0 4 8 12 16 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics v gs =1.5v 2v 2.5v 4.5v 0 4 8 12 16 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v 40 60 80 100 120 0 3 6 9 12 r ds(on) (m ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =1.8v v gs =2.5v v gs =4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 125 c 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =1.8v i d =2.5a v gs =4.5v i d =3a v gs =2.5v i d =2.8a 40 60 80 100 120 0 2 4 6 8 r ds(on) (m ? ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =3a 25 125 c rev 7: july 2010 www.aosmd.com page 3 of 5 downloaded from: http:///
AO3414 typical electrical and thermal characteristics 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 1 10 100 1000 power (w) v ds =10v i d =3a t j(max) =150 c t a =25 c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 i d (amps) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 s 1s rev 7: july 2010 www.aosmd.com page 4 of 5 12 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ? ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note e) v ds =10v i d =3a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =125 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 s 1s rev 7: july 2010 www.aosmd.com page 4 of 5 downloaded from: http:///
AO3414 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar rev 7: july 2010 www.aosmd.com page 5 of 5 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 7: july 2010 www.aosmd.com page 5 of 5 downloaded from: http:///
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